Contrast imaging of junctions and recombination activity in MWIR HgCdTe reactive-ion etched n-on-p photodiodes

Author

Gluszak, E.A. ; Hinckley, Steven ; Griffin, B.J.

Author_Institution

Centre for Very High Speed Microelectron. Syst., Edith Cowan Univ., Joondalup, WA, Australia

fYear

2000

fDate

2000

Firstpage

479

Lastpage

482

Abstract

A novel electron-beam characterization technique called Charge Contrast Imaging has been used to identify the type and spatial extent of doping and electrically active defects in MWIR reactive-ion etched (RIE) HgCdTe n-on-p photodiodes. In this technique, improved electro-morphological sensitivity to the material is observed. Quantitative characterization of the beam effects upon the junction properties is modelled upon experimental results using Laser Beam Induced Current Techniques (LBIC).

Keywords

II-VI semiconductors; OBIC; cadmium compounds; electron-hole recombination; infrared detectors; mercury compounds; photodiodes; scanning electron microscopy; sputter etching; HgCdTe; HgCdTe n-p photodiode; MWIR detector; charge contrast imaging; doping profile; electrically active defect; electro-morphological sensitivity; laser beam induced current; reactive ion etching; recombination activity; scanning electron microscopy; semiconductor junction; Australia; Etching; Laser beams; Laser modes; Packaging; Photodiodes; Plasma temperature; Scanning electron microscopy; Semiconductor laser arrays; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1022994

Filename

1022994