Contrast imaging of junctions and recombination activity in MWIR HgCdTe reactive-ion etched n-on-p photodiodes

A novel electron-beam characterization technique called Charge Contrast Imaging has been used to identify the type and spatial extent of doping and electrically active defects in MWIR reactive-ion etched (RIE) HgCdTe n-on-p photodiodes. In this technique, improved electro-morphological sensitivity to the material is observed. Quantitative characterization of the beam effects upon the junction properties is modelled upon experimental results using Laser Beam Induced Current Techniques (LBIC).