Improvement of the reliability of thin-film interconnections based on the control of the crystallinity of the thin films

Author

Asai, Osamu ; Murata, Norio ; Suzuki, Kenji ; Miura, Hidekazu

Author_Institution

Dept. of Nanomech., Tohoku Univ., Sendai, Japan

fYear

2012

fDate

13-16 Dec. 2012

Firstpage

1

Lastpage

5

Abstract

In this study, the degradation mechanism of electronic performance of electroplated copper interconnections was investigated by considering their crystallinity of grain boundaries. The crystallinity of the interconnections was evaluated quantitatively by applying an EBSD (Electron Back-scattered Diffraction) method. It was found that the crystallinity of the interconnections varied drastically depending on the seed layer material for electroplating. A new design guideline for highly reliable electroplated copper thin film interconnections was proposed based on the measured results.

Keywords

copper; electron backscattering; electron diffraction; electroplating; grain boundaries; interconnections; reliability; thin films; Cu; EBSD; crystallinity control; electron backscattered diffraction method; electronic performance degradation mechanism; grain boundaries; reliable electroplated copper thin film interconnections; seed layer material; thin-film interconnection reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Materials and Packaging (EMAP), 2012 14th International Conference on

Conference_Location

Lantau Island

Print_ISBN

978-1-4673-4945-1

Electronic_ISBN

978-1-4673-4943-7

Type

conf

DOI

10.1109/EMAP.2012.6507911

Filename

6507911