Title :
Improvement of the reliability of thin-film interconnections based on the control of the crystallinity of the thin films
Author :
Asai, Osamu ; Murata, Norio ; Suzuki, Kenji ; Miura, Hidekazu
Author_Institution :
Dept. of Nanomech., Tohoku Univ., Sendai, Japan
Abstract :
In this study, the degradation mechanism of electronic performance of electroplated copper interconnections was investigated by considering their crystallinity of grain boundaries. The crystallinity of the interconnections was evaluated quantitatively by applying an EBSD (Electron Back-scattered Diffraction) method. It was found that the crystallinity of the interconnections varied drastically depending on the seed layer material for electroplating. A new design guideline for highly reliable electroplated copper thin film interconnections was proposed based on the measured results.
Keywords :
copper; electron backscattering; electron diffraction; electroplating; grain boundaries; interconnections; reliability; thin films; Cu; EBSD; crystallinity control; electron backscattered diffraction method; electronic performance degradation mechanism; grain boundaries; reliable electroplated copper thin film interconnections; seed layer material; thin-film interconnection reliability;
Conference_Titel :
Electronic Materials and Packaging (EMAP), 2012 14th International Conference on
Conference_Location :
Lantau Island
Print_ISBN :
978-1-4673-4945-1
Electronic_ISBN :
978-1-4673-4943-7
DOI :
10.1109/EMAP.2012.6507911
