Title :
Optimization of high-speed MSM-photodiode structures
Author :
Averine, S.V. ; Chan, Y.C. ; Lam, Y.L.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The optimum geometry of interdigitated Schottky-barrier Metal-Semiconductor-Metal photodetector (MSM-PD) is discussed. From the calculated MSM-PD capacitance and transit time of optically generated carriers, the response time is evaluated and analysed. We propose a simple scaling rule to achieve best high-speed response of the MSM-detector. The optimum interelectrode spacing for interdigitated MSM-PD has been specified. The potentialities of different semiconductor materials for high-speed MSM-detectors are examined.
Keywords :
Schottky barriers; metal-semiconductor-metal structures; photodetectors; photodiodes; MSM photodiode; capacitance; carrier transit time; design optimization; high-speed response; interdigitated Schottky barrier metal-semiconductor-metal photodetector; interelectrode spacing; response time; scaling rule; semiconductor material; Capacitance; Delay; Detectors; Fingers; Geometrical optics; Geometry; High speed optical techniques; Optical saturation; Optical sensors; Photodetectors;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on
Print_ISBN :
0-7803-6698-0
DOI :
10.1109/COMMAD.2000.1023000
