Model of high-intensity local influence of microwave radiation on semiconductor layered structures

Author

Gordienko, Yu.E. ; Slipchenko, N.I. ; Taran, E.P.

Author_Institution

Kharkov Nat. Univ. of Radioelectron., Kharkov, Ukraine

fYear

2013

fDate

8-14 Sept. 2013

Firstpage

916

Lastpage

917

Abstract

The numerical model of local high-local influence of microwave radiation on semiconductor structures is presented. The electrodynamic part of the model is constructed with use of a method of FDTD with an adaptive spatial grid. At creation of thermal part the method of independent thermal streams was used. Distributions of electromagnetic and temperature fields in semiconductor structure which allow determining the characteristic sizes of local sites with increased temperature in semiconductor structures under the influence of electromagnetic fields of microwave range are obtained.

Keywords

electromagnetic waves; finite difference time-domain analysis; FDTD; adaptive spatial grid; electromagnetic; high intensity local influence; independent thermal streams; microwave radiation; microwave range; numerical model; semiconductor layered structures; semiconductor structures; temperature fields; Educational institutions; Finite difference methods; Microwave theory and techniques; Numerical models; Semiconductor device modeling; Temperature distribution; Time-domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-966-335-395-1

Type

conf

Filename

6653124