Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN

Author

Goldys, E.M. ; Godlewski, M. ; Kaminska, E. ; Piotrowska, A. ; Koley, G. ; Spencer, M.G. ; Eastman, L.F.

Author_Institution

Div. of Inf. & Commun. Sci., Macquarie Univ., Sydney, NSW, Australia

fYear

2000

fDate

2000

Firstpage

539

Lastpage

542

Abstract

We report the observation of intense satellite lines in the emission of p-GaN excited at 325 nm. Up to six lines are observed at the high-energy wing of the 3.1 eV emission, with separations suggesting a multiple LO phonon-related effect. The observed process is interpreted as hot exciton luminescence, enhanced by potential fluctuations. Kelvin probe force microscopy was used to image the local electrical properties of these films. The results correspond well with the behaviour of the conduction band edge fluctuations revealed in the measurements of hot exciton photoluminescence.

Keywords

III-V semiconductors; atomic force microscopy; conduction bands; contact potential; excitons; gallium compounds; hot carriers; photoluminescence; wide band gap semiconductors; 325 nm; GaN; Kelvin probe force microscopy; conduction band edge fluctuations; hot exciton luminescence; intense satellite lines; local electrical properties; multiple LO phonon-related effect; photoluminescence; potential fluctuations; Excitons; Fluctuations; Force measurement; Gallium nitride; Kelvin; Luminescence; Microscopy; Probes; Semiconductor films; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2000. COMMAD 2000. Proceedings Conference on

Print_ISBN

0-7803-6698-0

Type

conf

DOI

10.1109/COMMAD.2000.1023006

Filename

1023006