Title :
Radiation effects in elements of submicron CMOS integrated circuits with various kinds of isolation
Author :
Bogatyrev, Yu.V. ; Lastovskiy, S.B. ; Korshunov, F.P. ; Kulgachev, V.I. ; Turtsevich, A.S. ; Shwedov, S.V. ; Malyshev, V.S. ; Yarmolik, A.M.
Author_Institution :
Sci.-Practical Mater. Res. Centre, Minsk, Belarus
Abstract :
The results of experimental researches of radiation resistance of element base of 0.35 μm CMOS integrated circuits under influence of Co60 gamma-irradiation are submitted. The comparative analysis of influence of various kinds of isolation of CMOS IC´ elements (LOCOS and Shallow Trench Isolation - STI) on radiation variation of MOS transistors´ parameters is carried out.
Keywords :
CMOS integrated circuits; MOSFET; cobalt; radiation effects; CMOS IC element isolation; Co60; LOCOS; MOS transistor parameters; STI; gamma-irradiation; radiation effects; radiation resistance; shallow trench isolation; size 0.35 mum; submicron CMOS integrated circuits; CMOS integrated circuits; Electronic mail; MOSFET; MOSFET circuits; Materials; Radiation effects;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
