DocumentCode
2044980
Title
Power integrated circuit drives based on HV NMOS
Author
Finco, S. ; Tavares, P. ; Mattos, A. C Fiore De ; Simas, M. I Castro
Author_Institution
Centro de Pesquisas Renato Archer-CenPRA, Sao Paulo, Brazil
Volume
4
fYear
2002
fDate
2002
Firstpage
1737
Lastpage
1740
Abstract
This paper presents high voltage (HV) NMOS based level shifters, bootstraps and charge pumps in direct and cascaded topologies, which are highly useful to implement either power integrated circuits (PICs) high-side transistor floating drives or compact inductorless DC-DC power supplies. Monolithic solutions resorting to a unique HV NMOS switching cell are very important when standard CMOS technologies are intended to be used. In fact, these floating drives are fully CMOS compatible. Even while using a dedicated PIC technology this approach is a cost effective one. Furthermore, topologies based on a unique HV NMOS can be implemented in regular and simple geometry, thus, they are prone to be easily configured by top metal layers and to pave the way to mask configurable PICs. Simulation and experimental results obtained for a level shifter, a bootstrap and a charge pump used either as voltage multiplier or as a floating voltage source are presented and discussed. These low cost solutions are highly desirable for mobile applications power management and an efficient drive either for PICs or for intelligent devices
Keywords
CMOS integrated circuits; DC-DC power convertors; bootstrap circuits; driver circuits; monolithic integrated circuits; power integrated circuits; power supplies to apparatus; voltage multipliers; CMOS compatible; HV NMOS switching cell; PIC; bootstraps; cascaded topologies; charge pumps; compact inductorless DC-DC power supplies; direct topologies; floating drives; floating voltage source; high voltage NMOS; high-side transistor floating drives; intelligent devices; level shifters; low cost solutions; mobile applications; power integrated circuits; power management; top metal layers; voltage multiplier; CMOS technology; Charge pumps; Circuit topology; Costs; Geometry; Integrated circuit technology; MOS devices; Power integrated circuits; Power supplies; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual
Conference_Location
Cairns, Qld.
Print_ISBN
0-7803-7262-X
Type
conf
DOI
10.1109/PSEC.2002.1023061
Filename
1023061
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