DocumentCode :
2045070
Title :
Gated-Field Emission Arrays with Single Carbon Nanotubes Grown on Mo Tips
Author :
Ding, Ming Q. ; Shao, Wensheng ; Chen, Changqing ; Li, Xinghui ; Bai, Guodong ; Zhang, Fuquan ; Li, Hanyan ; Jin Jun Feng
Author_Institution :
Nat. Lab. for Vacuum Electron., Beijing Vacuum Electron. Res. Inst.
fYear :
2006
fDate :
38899
Firstpage :
431
Lastpage :
432
Abstract :
In this work, we focus our attention on fabrications and characterizations of micro-gated-field emission arrays with CNTs grown on Mo tips (CNT FEAs). By further optimizing processing parameters, such as thickness of the sacrificial layer and height of Mo tips, the percentage of single CNTs increased to more than 50%. The I-V measurement of an array with 11000 cells at a gate voltage of 92 V showed an anode current of 1.2 mA, corresponding a current density of 0.57 A/cm2, with a gate current 3.3% of the anode current
Keywords :
anodes; carbon nanotubes; current density; field emitter arrays; 1.2 mA; 92 V; C; I-V measurement; anode current; current density; gate current; gate voltage; microgated-field emission arrays; single carbon nanotubes; Anodes; Apertures; Carbon nanotubes; Cathodes; Current density; Current measurement; Density measurement; Fabrication; Laboratories; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335252
Filename :
4134644
Link To Document :
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