DocumentCode
2045268
Title
Magnetotransport in an n-type diluted magnetic semiconductor: (Ga,Mn)N
Author
Lee, K.I. ; Ham, M.H. ; Lee, J.M. ; Chang, J.Y. ; Myoung, J.M. ; Han, S.H. ; Lee, W.Y.
Author_Institution
Korea Inst. of Sci. & Technol., Seoul, South Korea
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, magnetotransport in the ferromagnetic epitaxial (Ga,Mn)N films grown by plasma-enhanced molecular beam epitaxy (PEMBE) was reported. The variation of magnetoresistance (/spl Delta/R/R) with magnetic fields applied perpendicular to the sample was reported.
Keywords
III-V semiconductors; ferromagnetic materials; gallium compounds; magnetic epitaxial layers; magnetoresistance; manganese compounds; semiconductor epitaxial layers; semimagnetic semiconductors; vapour deposited coatings; wide band gap semiconductors; GaNMnN; MBE; ferromagnetic epitaxial (Ga,Mn)N films; magnetic fields; magnetoresistance; magnetotransport; n type diluted magnetic semiconductor (Ga,Mn)N; plasma-enhanced molecular beam epitaxy; Couplings; Gallium nitride; Magnetic anisotropy; Magnetic films; Magnetic moments; Magnetic semiconductors; Nitrogen; Plasma sources; Plasma temperature; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230410
Filename
1230410
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