CMOS-MEMS force microsensor for magnetic resonance detection

Author

McFeetors, G. ; Okoniewski, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

1006

Lastpage

1009

Abstract

An integrated MEMS-in-CMOS force and magnetic field sensor is described, which has been designed, fabricated and tested. This device uses a force-displaced mechanical mass, a capacitive displacement detector, and a low-noise CMOS amplifier to detect force and magnetic field. The entire device is fabricated on a 0.18 mum CMOS die using a maskless micromachining fabrication process. Measurements show that the device is capable of a sensitivity of 260 mV/uN at atmospheric pressure.

Keywords

CMOS integrated circuits; capacitive sensors; displacement measurement; force measurement; force sensors; low noise amplifiers; magnetic field measurement; magnetic resonance; magnetic sensors; micromachining; microsensors; CMOS-MEMS force microsensor; capacitive displacement detector; force detection; force-displaced mechanical mass; integrated sensor; low-noise CMOS amplifier; magnetic field sensor; magnetic resonance detection; maskless micromachining fabrication process; size 0.18 mum; Detectors; Force sensors; Low-noise amplifiers; Magnetic field measurement; Magnetic resonance; Magnetic sensors; Mechanical sensors; Microsensors; Sensor phenomena and characterization; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetics in Advanced Applications, 2009. ICEAA '09. International Conference on

Conference_Location

Torino

Print_ISBN

978-1-4244-3385-8

Electronic_ISBN

978-1-4244-3386-5

Type

conf

DOI

10.1109/ICEAA.2009.5297811

Filename

5297811