DocumentCode :
2045778
Title :
Study of Application Penetrating Surface Method in SEM to Detect IC with Insulator Layer Si3N4+ SiO2
Author :
Hu, Wengue ; Xiao, Ling ; Lin, Yiping ; Liang, Zhuguan ; Li, Yawen ; Li, Ping ; Lan, Dechun ; Wang, Jian ; Zhou, Kailin ; Rau, E.I.
Author_Institution :
Phys. & Technol. Coll., Yunnan Univ., Kunming
fYear :
2006
fDate :
38899
Firstpage :
487
Lastpage :
488
Abstract :
Two novel detectors are developed to detect semiconductor materials and integrated circuits: (1) the electron beam nondestructive microscopic perspective method (detector), the perspective method (detector); (2) the electron beam nondestructive microscopic layered method (detector), the layered method (detector). The novel methods and detectors were applied to scanning electron microscopy (SEM) and a novel instrument is successfully developed, the layered perspective instrument
Keywords :
electron beam applications; insulating materials; integrated circuits; scanning electron microscopy; semiconductor materials; sensors; silicon compounds; SEM; Si3N4-SiO2; detector; electron beam nondestructive microscopic layered method; electron beam nondestructive microscopic perspective method; insulator layer; integrated circuits; layered perspective instrument; penetrating surface method; scanning electron microscopy; semiconductor materials; Application specific integrated circuits; Detectors; Insulation; Integrated circuit manufacture; Integrated circuit technology; Microstructure; Physics; Scanning electron microscopy; Semiconductor device manufacture; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335289
Filename :
4134672
Link To Document :
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