DocumentCode :
2045846
Title :
Instrumentation Developments in Atom Probe Tomography
Author :
Bunton, J.H. ; Lenz, D. ; Olson, J.D. ; Thompson, K. ; Ulfig, R.M. ; Larson, D.J. ; Oltman, E. ; Kelly, T.F.
Author_Institution :
Imago Sci. Instrum. Corp., Madison, WI
fYear :
2006
fDate :
38899
Firstpage :
497
Lastpage :
498
Abstract :
In this paper, recent trends in atom probe instrumentation were described. Also, examples of specific applications were provided. An aluminum field desorption image the demonstrates the wide field-of-view (FOV) capability of the recently developed atom probe detector was presented. The voltage pulsing and laser pulsing modes for metal and semiconductor materials were compared. The combination of pulsed laser atom probe and the expanded FOV facilitate the development of breakthrough applications in semiconductor materials such as dopant profile analysis were also shown
Keywords :
atom probe field ion microscopy; desorption; doping profiles; semiconductor materials; aluminum field desorption image; atom probe detector; atom probe tomography; dopant profile analysis; instrumentation; laser pulsing modes; metal; semiconductor materials; voltage pulsing modes; wide field-of-view capability; Aluminum; Atomic beams; Detectors; Instruments; Laser modes; Probes; Semiconductor lasers; Semiconductor materials; Tomography; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International
Conference_Location :
Guilin
Print_ISBN :
1-4244-0401-0
Type :
conf
DOI :
10.1109/IVNC.2006.335294
Filename :
4134677
Link To Document :
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