Title :
Analysis of process variation effects on a CMOS bidirectional associative memory
Author :
Aslam, Ashfaq ; Mack, Robert J.
Author_Institution :
Dept. of Electron. Syst. Eng., Essex Univ., Colchester, UK
Abstract :
This paper discusses the results of an analysis on the effects of process variation for a CMOS BAM; the most significant factors being transistor parameter variation in threshold voltage (VTO), and conduction factor (K´). Monte-Carlo simulation has been carried out for a range of process deviations and for different sizes of BAM. This has enabled bounds to be established, for a specified size of BAM, on the process parameter deviation allowable for correct recall. It is shown that the BAM recall failure rate is pattern dependent, and pattern pairs with the maximum or close to maximum hamming distance between them have significantly lower pattern recall failure rates compared to randomly selected pattern pairs
Keywords :
CMOS analogue integrated circuits; Monte Carlo methods; analogue multipliers; analogue storage; circuit analysis computing; content-addressable storage; failure analysis; integrated circuit reliability; neural chips; BAM recall failure rate; CMOS bidirectional associative memory; Monte-Carlo simulation; conduction factor; four-quadrant multiplier; maximum hamming distance; pattern dependence; pattern recall failure rates; process variation effects; threshold voltage; transistor parameter variation; Associative memory; CMOS process; MOSFETs; Magnesium compounds; Network topology; Neural networks; Neurons; System analysis and design; Threshold voltage; Very large scale integration;
Conference_Titel :
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location :
Ames, IA
Print_ISBN :
0-7803-3636-4
DOI :
10.1109/MWSCAS.1996.594206
