Ferromagnetic Co3−xFexSi/Si(111) contacts with high-quality heterointerfaces for spin-transistor applications

We examine epitaxial growth of Co_3-xFe_xSi thin films on Si(111), their structural, and magnetic properties. We reveal that the interfacial reaction between Co_3-xFe_xSi and Si can be suppressed with increasing Fe contents. Also, we find that the changes in magnetic moment and in-plane magnetic anisotropy of Co_3-xFe_xSi eplilayers are influenced by their interfacial structures. This study gives an important knowledge to obtain high-quality Co-based Heusler compounds/Si structures for future Si-based spin transistors.