Title :
Characteristic comparison of connected DG FINFET, TG FINFET and Independent Gate FINFET on 32 nm technology
Author :
Tripathi, S.L. ; Mishra, Ravishankar ; Mishra, R.A.
Abstract :
This paper describes the comparative study of different performance parameters for connected DG FINFET, tri-gate FINFET and Independent Gate FINFET. The characteristic parameters, which are drain current, threshold voltage, DIBL and Subthershold slope were evaluated with the help of 3-D TCAD Device simulator on 32nm technology. As the number of gates increases, the electrostatic control on the channel increases leading to the decrease in short channel effect. To overcome the short channel effect a suitable threshold voltage is required with the scaling trend in device dimension. The threshold voltage variation is obtained by varying metal gate work function in DG and TG FINFET while in IG FINFET the threshold voltage is varied by changing one of the gate voltage.
Keywords :
MOSFET; circuit simulation; technology CAD (electronics); 3D TCAD device simulator; DIBL; TG FINFET; characteristic parameters; connected DG FINFET; device dimension; drain current; electrostatic control; independent gate FINFET; metal gate work function; performance parameters; scaling trend; short channel effect; size 32 nm; subthershold slope; threshold voltage variation; tri-gate FINFET; 3-D Sentaurus TCAD tool; DIBL; Double gate(DG); Independent gate(IG); Short channel effect; Silicon-On-Insulator(SOI); Subthreshold Slope; Tri-gate(TG); Work function;
Conference_Titel :
Power, Control and Embedded Systems (ICPCES), 2012 2nd International Conference on
Conference_Location :
Allahabad
Print_ISBN :
978-1-4673-1047-5
DOI :
10.1109/ICPCES.2012.6508037