• DocumentCode
    2046815
  • Title

    Influence of anti-resonance peak in power supply network on power and signal integrity

  • Author

    Yamaguchi, Toru ; Hatogai, Yusuke ; Sudo, Toshio

  • Author_Institution
    Shibaura-Inst. of Technol., Tokyo, Japan
  • fYear
    2013
  • fDate
    2-6 Sept. 2013
  • Firstpage
    224
  • Lastpage
    228
  • Abstract
    Reduction of PDN impedance is necessary to prevent false logic operation of the CMOS LSIs. Constant target impedance with frequency is used as a simple method to define PDN impedance of the system. However, this conventional target impedance did not change with frequency, and was not applied to the high frequency range where PDN impedance exceeds the constant value of target impedance. Therefore, newly frequency dependent target impedance has been derived and applied to the DDR3 memory system. Co-simulation model has been established to estimate power Integrity (PI) and signal Integrity (SI) at the same time. The switching current flowing from the chip was connected to the whole PDN model, and power supply noise and eyes diagram were simulated. The new target impedance has been proved to be reasonable for maintaining the power supply noise and the eye diagrams.
  • Keywords
    CMOS logic circuits; integrated memory circuits; large scale integration; logic design; CMOS; DDR3 memory system; LSI; PDN impedance; anti-resonance peak; cosimulation model; eyes diagram; false logic operation; power integrity; power supply network; power supply noise; signal integrity; target impedance; Application specific integrated circuits; Electromagnetic compatibility; Impedance; Noise; Power supplies; Solid modeling; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility (EMC EUROPE), 2013 International Symposium on
  • Conference_Location
    Brugge
  • ISSN
    2325-0356
  • Type

    conf

  • Filename
    6653232