DocumentCode
2046980
Title
Applying amorphous CoNbZr shield to improve the dielectric-breakdown voltages of the gap layers of narrow-gap read heads
Author
Hoshino, K. ; Odai, S. ; Hatatani, M.
Author_Institution
Central Res. Lab., Hitachi Ltd., Kanagawa, Japan
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, the effect of the lower shield materials on the breakdown voltage of the lower insulating gap layer has been investigated. A hybrid shield CoNbZr layer on NiFe shield was applied ton the read , and the resulting narrow gap head´s performance in reading was observed.
Keywords
amorphous magnetic materials; cobalt alloys; electric breakdown; ferromagnetic materials; insulating thin films; iron alloys; magnetic heads; magnetic shielding; nickel alloys; niobium alloys; zirconium alloys; CoNbZr; NiFe; NiFe shield; amorphous CoNbZr shield; dielectric-breakdown voltages; insulating gap layer; narrow-gap read heads; Amorphous materials; Dielectric measurements; Dielectric substrates; Dielectrics and electrical insulation; Disk recording; Electrodes; Hard disks; Magnetic heads; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230478
Filename
1230478
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