DocumentCode
2047364
Title
SiProbe-a new technology for wafer probing
Author
Zimmermann, Karl F.
Author_Institution
Contact Technol., Newbury Park, CA, USA
fYear
1995
fDate
21-25 Oct 1995
Firstpage
106
Lastpage
112
Abstract
This paper will describe a new wafer probing technology that is particularly applicable to the simultaneous probing of multiple die and high pin-count devices that cannot be probed using conventional needle probing cards. Inherent in the design of this product is the capability for high density area array probing at grid densities as high as 50×150 microns and at probe pointing accuracies approaching that of semiconductor feature placement. High-frequency and high-temperature testing are also benefits of this technology
Keywords
contact resistance; elemental semiconductors; integrated circuit testing; semiconductor technology; silicon; test equipment; 150 mum; 50 mum; CuBe; Si; Si plates; buckling beam; compound wire; contact resistance; grid densities; high pin-count devices; high-frequency testing; high-temperature testing; multiple die; probe pointing accuracies; semiconductor feature placement; simultaneous probing; wafer probing; Assembly; Circuit testing; Etching; Manufacturing processes; Needles; Probes; Silicon; Springs; Temperature distribution; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 1995. Proceedings., International
Conference_Location
Washington, DC
ISSN
1089-3539
Print_ISBN
0-7803-2992-9
Type
conf
DOI
10.1109/TEST.1995.529823
Filename
529823
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