DocumentCode
2047483
Title
Mgnetoresistance in ballistic Ni nanocontact at 4.2K
Author
Ienaga, Koichiro ; Nakashima, Naoya ; Inagaki, Yuji ; Kawae, Tatsuya ; Tsujii, Hiroyuki
Author_Institution
Dept. of Appl. Quantum Phys., Kyushu Univ., Fukuoka, Japan
fYear
2010
fDate
21-24 Nov. 2010
Firstpage
1891
Lastpage
1893
Abstract
The magnetoresistance (MR) effect is studied in Ni atomic-sized contact at 4.2K. We show that the magnetostriction gives rise to a huge MR ratio by switching the direction of the magnetization axis.
Keywords
enhanced magnetoresistance; magnetic switching; magnetisation; magnetostriction; nanocontacts; nanomagnetics; nickel; Ni; atomic-sized contact; ballistic nanocontact; magnetization axis; magnetoresistance effect; magnetostriction; temperature 4.2 K; Atomic-sized contact; Magnetostriction; Ni; magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location
Fukuoka
ISSN
pending
Print_ISBN
978-1-4244-6889-8
Type
conf
DOI
10.1109/TENCON.2010.5686404
Filename
5686404
Link To Document