• DocumentCode
    2047539
  • Title

    Crack initiation and growth during low cycle fatigue of Pb-Sn solder joints

  • Author

    Guo, Z. ; Sprecher, A.F. ; Conrad, H.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
  • fYear
    1991
  • fDate
    11-16 May 1991
  • Firstpage
    658
  • Lastpage
    666
  • Abstract
    The initiation and growth of fatigue cracks during low-cycle fatigue of Pb-Sn solder joints (60Sn-40Pb and 75Sn-25Pb) in shear at 300 K were followed employing two techniques: (a) surface examination by low-power optical microscopy and (b) liquid N2 cracking of fatigued specimens. Cracks 50 to 100 μm long were first detected by the optical microscopy examination of the specimen surface at the beginning of Stage II of the load drop parameter φ vs. N curve. These cracks then grew as the specimen was cycled further into Stage II. SEM fractographs of fatigued specimens broken after immersion in liquid N2 revealed that fatigue cracks initiated mainly at the external surface and at the internal voids and grew by cracking along all three of the common paths: eutectic colony boundaries, grain boundaries, and across the colonies, i.e., a transgranular path. The drop in load which occurred during the fatigue test was established to be proportional to the fatigue cracked area
  • Keywords
    fatigue cracks; lead alloys; optical microscopy; scanning electron microscope examination of materials; soldering; tin alloys; 300 K; Pb-Sn solder joints; SEM fractographs; eutectic colony boundaries; external surface; fatigue cracks; grain boundaries; internal voids; liquid N2 cracking; load drop parameter; low cycle fatigue; low-power optical microscopy; surface examination; transgranular path; Capacitive sensors; Fatigue; Fixtures; Materials science and technology; Optical microscopy; Scanning electron microscopy; Soldering; Surface cracks; Tensile stress; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1991. Proceedings., 41st
  • Conference_Location
    Atlanta, GA
  • Print_ISBN
    0-7803-0012-2
  • Type

    conf

  • DOI
    10.1109/ECTC.1991.163950
  • Filename
    163950