Title :
Annealing and texturing of a-Si film using Nd3+:YAG laser with Gaussian and flat-top beam profiles
Author :
Palani, I.A. ; Rajiv, G. ; Vasa, N.J. ; Singaperumal, M.
Author_Institution :
Dept of Mech. Eng., Indian Inst. of Technol. Madras, Chennai, India
Abstract :
An application of a pulsed, solid-state laser with a Gaussian and flat-top beam profiles is considered for annealing and nano-texturing of amorphous-silicon (a-Si) films. Investigations are performed with the third harmonics (355 nm) Nd3+:YAG laser. To crystallize and subsequently induce texture, a-Si films are treated by spatial-overlapping of the laser spots on the surface by 90% of its size. The generation of texturization mechanism in laser assisted annealing and texturing is theoretically investigated and experimentally analyzed.
Keywords :
amorphous semiconductors; crystallisation; elemental semiconductors; laser beam annealing; laser beams; semiconductor thin films; silicon; texture; Gaussian profiles; Nd3+:YAG laser; Si; YAG:Nd; a-Si film; amorphous-silicon films; annealing; crystallization; flat-top beam profiles; laser spot spatial-overlapping; nanotexturing; pulsed laser; solid-state laser; texturing; third harmonics; wavelength 355 nm; Amorphous silicon; Laser annealing; Laser texturing; Photovolataic applictaions; polycrytsalline silicon;
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-6889-8
DOI :
10.1109/TENCON.2010.5686429
