DocumentCode :
2048322
Title :
Concatenated Reed-Solomon Code with Hamming Code for DRAM Controller
Author :
Rhee, Sunwook ; Kim, Changgeun ; Kim, Juhee ; Jee, Yong
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Volume :
1
fYear :
2010
fDate :
19-21 March 2010
Firstpage :
291
Lastpage :
295
Abstract :
In this paper, we propose a concatenated Reed-Solomon code with a Hamming code for dynamic random access memory (DRAM) controller. The concatenated code consists of a Reed-Solomon outer code, two shortened Reed-Solomon codes, and a Hamming inner code. The proposed code takes the advantages of Reed-Solomon codes and Hamming codes to protect DRAM memory data against single event upsets and multiple bit upsets. At the byte error rate of 10-7, the proposed decoder shows about 1.3 dB of coding gain over that of the conventional Reed-Solomon decoder. We implement the proposed concatenated Reed-Solomon code on a very large-scale integration (VLSI) chip with 0.13 ¿ m complementary metal oxide semiconductor (CMOS) standard cell library at a supply voltage of 1.2 V. The core area of proposed architecture is 1.12 mm2 with the gate counts of 121,900. The synthesized result shows the maximum throughput of 1.71 Gbps and the measured power consumption of 69 mW at 259 MHz.
Keywords :
DRAM chips; Hamming codes; Reed-Solomon codes; VLSI; cellular arrays; concatenated codes; controllers; CMOS; DRAM controller; DRAM memory data; Hamming codes; Reed-Solomon decoder; VLSI chip; byte error rate; complementary metal oxide semiconductor standard cell library; concatenated Reed-Solomon codes; dynamic random access memory controller; very large scale integration; Concatenated codes; DRAM chips; Decoding; Error analysis; Gain; Large scale integration; Protection; Random access memory; Reed-Solomon codes; Single event upset; Concatenated codes; Error correcting codes(ECC); Hamming code; Reed-Solomon code; memory controller;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Engineering and Applications (ICCEA), 2010 Second International Conference on
Conference_Location :
Bali Island
Print_ISBN :
978-1-4244-6079-3
Electronic_ISBN :
978-1-4244-6080-9
Type :
conf
DOI :
10.1109/ICCEA.2010.65
Filename :
5445819
Link To Document :
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