• DocumentCode
    2048476
  • Title

    Ballistic current-voltage model in depletion all around operation of the SOI four-gate transistor

  • Author

    Jahangir, Shafat ; Jahangir, Ifat ; Khosru, Quazi D M ; Hossain, Shahera

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
  • fYear
    2010
  • fDate
    21-24 Nov. 2010
  • Firstpage
    1927
  • Lastpage
    1932
  • Abstract
    Two dimensional Poisson-Schrödinger equation is solved numerically in depletion-all-around (DAA) operation of n-channel four-gate transistor (G4-FET) by finite element method using COMSOL with MATLAB. Ballistic drain current is calculated by mode-space approach using modified Tsu-Esaki equation. Effect of multiple gate bias on current-voltage characteristics is observed.
  • Keywords
    Schrodinger equation; field effect transistors; finite element analysis; silicon-on-insulator; stochastic processes; COMSOL; G4-FET; MATLAB; Poisson-Schrödinger equation; SOI four-gate transistor; ballistic current-voltage model; ballistic drain current; current-voltage characteristics; depletion-all-around operation; finite element method; mode-space approach; modified Tsu-Esaki equation; Four gate transistor (G4FET); ballistic current; depletion all around operation; finite element method; two dimensional Poisson-Schrödinger equation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2010 - 2010 IEEE Region 10 Conference
  • Conference_Location
    Fukuoka
  • ISSN
    pending
  • Print_ISBN
    978-1-4244-6889-8
  • Type

    conf

  • DOI
    10.1109/TENCON.2010.5686440
  • Filename
    5686440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2048476