• DocumentCode
    2049044
  • Title

    Paradigm shift in ESD qualification

  • Author

    Duvvury, Charvaka

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    For more than 20 years, IC component level ESD requirements have essentially stayed constant, while the silicon technologies rapidly advanced and effective production control methods have vastly improved. The silicon area impact coming from the technology scaling, combined with the high speed circuit performance impact and the influence from the IC package technology advances, are making the ESD design to the current levels a constraint leading to permanent delays in the product innovative cycles. Todaypsilas enhanced control methods do not justify this ESD over-design. This paper will propose a paradigm shift to more realistic but safe ESD target levels based on field data collected from IC suppliers and contract manufacturers.
  • Keywords
    electrostatic discharge; elemental semiconductors; high-speed integrated circuits; integrated circuit design; integrated circuit packaging; integrated circuit reliability; silicon; ESD design; IC component level ESD requirements; IC package technology; IC reliability area; Si; high speed circuit performance; production control methods; safe ESD target levels; silicon area impact; silicon technologies; Circuit optimization; Contracts; Delay; Electrostatic discharge; High speed integrated circuits; Integrated circuit packaging; Production control; Pulp manufacturing; Qualifications; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2049-0
  • Electronic_ISBN
    978-1-4244-2050-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.2008.4558855
  • Filename
    4558855