DocumentCode
2049044
Title
Paradigm shift in ESD qualification
Author
Duvvury, Charvaka
Author_Institution
Texas Instrum. Inc., Dallas, TX
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
1
Lastpage
2
Abstract
For more than 20 years, IC component level ESD requirements have essentially stayed constant, while the silicon technologies rapidly advanced and effective production control methods have vastly improved. The silicon area impact coming from the technology scaling, combined with the high speed circuit performance impact and the influence from the IC package technology advances, are making the ESD design to the current levels a constraint leading to permanent delays in the product innovative cycles. Todaypsilas enhanced control methods do not justify this ESD over-design. This paper will propose a paradigm shift to more realistic but safe ESD target levels based on field data collected from IC suppliers and contract manufacturers.
Keywords
electrostatic discharge; elemental semiconductors; high-speed integrated circuits; integrated circuit design; integrated circuit packaging; integrated circuit reliability; silicon; ESD design; IC component level ESD requirements; IC package technology; IC reliability area; Si; high speed circuit performance; production control methods; safe ESD target levels; silicon area impact; silicon technologies; Circuit optimization; Contracts; Delay; Electrostatic discharge; High speed integrated circuits; Integrated circuit packaging; Production control; Pulp manufacturing; Qualifications; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558855
Filename
4558855
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