DocumentCode
2049088
Title
Kink-free design of submicron MRAM cell
Author
Lee, K.J. ; Park, W.
Author_Institution
Storage Lab., Samsung Adv. Inst. of Technol., Suwon, South Korea
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this work, full micromagnetic simulations with comparing experimental measurements have been performed for broad range of Ms (400/spl sim/1600 emu/cm/sup 3/), thickness of free layer (1/spl sim/5 nm) and aspect ratio of MRAM cell (1.5/spl sim/3). We used cell with round edge, since perfect rectangular or elliptical shape is hardly obtained from conventional lithography technology. For the round cell, edge radius was 80 nm and short width was 0.2 /spl mu/m.
Keywords
integrated circuit design; integrated circuit modelling; magnetisation; magnetoelectronics; magnetoresistive devices; micromagnetics; random-access storage; 0.2 micron; 1 to 5 nm; 80 nm; Kink-free layer design; MRAM cell; elliptical shape; lithography technology; micromagnetic simulations; submicron MRAM cell; Lithography; Magnetic switching; Magnetoresistance; Micromagnetics; Performance evaluation; Random access memory; Saturation magnetization; Shape; Switches; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230564
Filename
1230564
Link To Document