Title :
Deposition of transparent conducting Al-doped ZnO thin films by ICP-assisted sputtering
Author :
Shindo, Ryota ; Iwata, Tadashi ; Hirashima, Akinori ; Shinohara, Masanori ; Matsuda, Yoshinobu
Author_Institution :
Grad. Sch. of Sci. & Technol., Nagasaki Univ., Nagasaki, Japan
Abstract :
Aluminum-doped zinc oxide (AZO) is one of the promising transparent conductive oxide materials, which is expected to be an alternative to tin-doped indium oxide (ITO) that for long has been widely used in industry. The authors have been engaged in the development of AZO deposition process using inductively-coupled plasma assisted sputtering in a couple of years. This paper reports the results showing effectiveness of inductively coupled plasma (ICP) assisted sputtering in AZO film deposition process.
Keywords :
II-VI semiconductors; aluminium; electrical conductivity; plasma deposition; semiconductor growth; semiconductor thin films; sputter deposition; transparency; wide band gap semiconductors; ICP-assisted sputtering deposition; ZnO:Al; inductively-coupled plasma assisted sputtering; transparent conducting thin films; Inductively-coupled plasma; Optical spectroscopy; Sputtering; Transparent conducting oxide films; Zinc oxide;
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-6889-8
DOI :
10.1109/TENCON.2010.5686462
