Anomalous Temperature-Dependent Bimodal Size Evolution of InAs Quantum Dots on Vicinal GaAs(100) Substrates

Author

Liang, S. ; Zhu, H.L. ; Zhou, J.T. ; Cheng, Y.B. ; Pan, J.Q. ; Zhao, L.J. ; Wang, W.

Author_Institution

State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing

fYear

2006

fDate

16-18 Oct. 2006

Firstpage

306

Lastpage

309

Abstract

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520degC, and then there is a sudden decrease at 535degC. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor materials; semiconductor quantum dots; GaAs; InAs; anomalous temperature-dependent bimodal size; metalorganic chemical vapor deposition; photoluminescence; quantum dots; vicinal substrates; Atomic force microscopy; Chemical vapor deposition; Gallium arsenide; MOCVD; Optical surface waves; Photoluminescence; Quantum dot lasers; Quantum dots; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Biophotonics, Nanophotonics and Metamaterials, 2006. Metamaterials 2006. International Symposium on

Conference_Location

Hangzhou

Print_ISBN

0-7803-9773-8

Electronic_ISBN

0-7803-9774-6

Type

conf

DOI

10.1109/METAMAT.2006.335067

Filename

4134806