DocumentCode
2049143
Title
Spin-valve and pseudo-spin-valve device switching for giant magnetoresistive random access memory applications
Author
Katti, R.R. ; Zou, D. ; Reed, D. ; Kaakani, H.
Author_Institution
Solid-State Electron. Center, Honeywell Intl. Inc., Plymouth, MN, USA
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper we reports results of switching characteristics and resistance properties of current- in-plane spin-valve (SV) and PSV devices that in particular can be applied to GMRAM two-resistor/two-transistor (2R2T) latch memory architectures.
Keywords
flip-flops; giant magnetoresistance; magnetic switching; random-access storage; resistors; spin valves; transistors; giant magnetoresistive random access memory; pseudospin-valve device switching; resistance properties; spin-valve; two resistor two transistor latch memory; Couplings; Design optimization; Giant magnetoresistance; Magnetic devices; Magnetic fields; Magnetic separation; Magnetic switching; Magnetization; Random access memory; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230567
Filename
1230567
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