Title :
Spin-valve and pseudo-spin-valve device switching for giant magnetoresistive random access memory applications
Author :
Katti, R.R. ; Zou, D. ; Reed, D. ; Kaakani, H.
Author_Institution :
Solid-State Electron. Center, Honeywell Intl. Inc., Plymouth, MN, USA
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper we reports results of switching characteristics and resistance properties of current- in-plane spin-valve (SV) and PSV devices that in particular can be applied to GMRAM two-resistor/two-transistor (2R2T) latch memory architectures.
Keywords :
flip-flops; giant magnetoresistance; magnetic switching; random-access storage; resistors; spin valves; transistors; giant magnetoresistive random access memory; pseudospin-valve device switching; resistance properties; spin-valve; two resistor two transistor latch memory; Couplings; Design optimization; Giant magnetoresistance; Magnetic devices; Magnetic fields; Magnetic separation; Magnetic switching; Magnetization; Random access memory; Switching circuits;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230567
