DocumentCode
2049157
Title
A process integration of high performance 64 Kb MRAM
Author
Kim, Kinam ; Koh, K.H. ; Jeong, G.T. ; Jeong, W.C. ; Park, J.H. ; Lee, S.Y. ; Song, L-H ; Jeong, H.S. ; Kinam Kim
Author_Institution
Semiconductor R& D Div, Samsung Electron. Co. Ltd.,, Seoul, South Korea
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, magnetic and electrical properties of the MTJs have been investigated at each fabrication step of the full integration with carefully designed parameters of M-H and I-V properties and TMR properties of 64Kb MRAM with minimal process induced damages have been achieved.
Keywords
CMOS memory circuits; coercive force; magnetic storage; magnetic tunnelling; magnetisation; magnetoresistance; random-access storage; 64 KB; electrical properties; magnetic properties; magnetic random access memory; magnetic tunneling junction; tunneling magnetoresistance; Argon;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230568
Filename
1230568
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