DocumentCode
2049188
Title
Empty square as a hard-layer for MRAM
Author
Geerpuram, D. ; Mani, A.S. ; Ayloo, K. ; Domanowski, A. ; Metlushko, V.
Author_Institution
Dept. of Electr. & Comput. Eng., Chicago Univ., IL, USA
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, we propose a new design , which utilizes "empty squares" or narrow squares or narrow rings as the basic element for the fabrication of hard layer of MRAM. At remanence a stable bi-domain state called the "onion" state is observed. The onion state corresponds to each half of the square ring, on either side of the diagonal, having the same magnetization orientation and forming head-to-head and tail-to-tail domain walls.
Keywords
integrated circuit design; magnetic domain walls; magnetoelectronics; random-access storage; remanence; bidomain state; empty square; hard-layer; head-head domain walls; magnetic RAM; magnetization orientation; narrow squares; onion state; remanence; tail-tail domain walls; Magnetic domain walls; Magnetic domains; Magnetic force microscopy; Magnetic forces; Magnetic separation; Magnetization; Magnetosphere; Random access memory; Remanence; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230570
Filename
1230570
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