Title :
Empty square as a hard-layer for MRAM
Author :
Geerpuram, D. ; Mani, A.S. ; Ayloo, K. ; Domanowski, A. ; Metlushko, V.
Author_Institution :
Dept. of Electr. & Comput. Eng., Chicago Univ., IL, USA
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we propose a new design , which utilizes "empty squares" or narrow squares or narrow rings as the basic element for the fabrication of hard layer of MRAM. At remanence a stable bi-domain state called the "onion" state is observed. The onion state corresponds to each half of the square ring, on either side of the diagonal, having the same magnetization orientation and forming head-to-head and tail-to-tail domain walls.
Keywords :
integrated circuit design; magnetic domain walls; magnetoelectronics; random-access storage; remanence; bidomain state; empty square; hard-layer; head-head domain walls; magnetic RAM; magnetization orientation; narrow squares; onion state; remanence; tail-tail domain walls; Magnetic domain walls; Magnetic domains; Magnetic force microscopy; Magnetic forces; Magnetic separation; Magnetization; Magnetosphere; Random access memory; Remanence; Shape;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230570
