• DocumentCode
    2049188
  • Title

    Empty square as a hard-layer for MRAM

  • Author

    Geerpuram, D. ; Mani, A.S. ; Ayloo, K. ; Domanowski, A. ; Metlushko, V.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Chicago Univ., IL, USA
  • fYear
    2003
  • fDate
    March 30 2003-April 3 2003
  • Abstract
    In this paper, we propose a new design , which utilizes "empty squares" or narrow squares or narrow rings as the basic element for the fabrication of hard layer of MRAM. At remanence a stable bi-domain state called the "onion" state is observed. The onion state corresponds to each half of the square ring, on either side of the diagonal, having the same magnetization orientation and forming head-to-head and tail-to-tail domain walls.
  • Keywords
    integrated circuit design; magnetic domain walls; magnetoelectronics; random-access storage; remanence; bidomain state; empty square; hard-layer; head-head domain walls; magnetic RAM; magnetization orientation; narrow squares; onion state; remanence; tail-tail domain walls; Magnetic domain walls; Magnetic domains; Magnetic force microscopy; Magnetic forces; Magnetic separation; Magnetization; Magnetosphere; Random access memory; Remanence; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2003. INTERMAG 2003. IEEE International
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-7647-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2003.1230570
  • Filename
    1230570