DocumentCode
2049216
Title
A high speed and high reliability drive-protection circuit for power transistor
Author
Wu Longan ; Wan Shuyun ; Zhang Xiaoguang ; Huang Jinen ; Deng Xiangzhen ; Lai Shouhong
Author_Institution
Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume
5
fYear
1993
fDate
19-21 Oct. 1993
Firstpage
572
Abstract
This paper presents a high speed and high reliability drive-protection circuit for the GTR power transistor, based on the characteristics of GTR. The circuit keeps the GTR working in the optimum state. With the protection circuit a military research subject has been completed successfully.<>
Keywords
driver circuits; power transistors; protection; reliability; GTR power transistor; drive-protection circuit; high reliability; high speed; military research subject; power transistor; Delay effects; Driver circuits; Microwave integrated circuits; Power system protection; Power transistors; Pulse width modulation; Thyristors; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON '93. Proceedings. Computer, Communication, Control and Power Engineering.1993 IEEE Region 10 Conference on
Conference_Location
Beijing, China
Print_ISBN
0-7803-1233-3
Type
conf
DOI
10.1109/TENCON.1993.320707
Filename
320707
Link To Document