DocumentCode :
2049221
Title :
Increase of switching field from a word line by design optimization
Author :
Kim, K.S. ; Lee, C.E. ; Lim, S.H.
Author_Institution :
Dept. of Phys., Korea Univ., Seoul, South Korea
fYear :
2003
fDate :
March 30 2003-April 3 2003
Abstract :
In this work we introducing a soft magnetic keeper layer to a word line and optimizing the shape of the word line.
Keywords :
integrated circuit design; integrated circuit modelling; magnetic switching; magnetoelectronics; optimisation; random-access storage; soft magnetic materials; design optimization; optimization; soft magnetic keeper layer; switching field; word line; Art; Current density; Design optimization; Large Hadron Collider; Magnetic switching; Magnetic tunneling; Packaging; Shape; Soft magnetic materials; Tiles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
Type :
conf
DOI :
10.1109/INTMAG.2003.1230571
Filename :
1230571
Link To Document :
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