DocumentCode
2049236
Title
A Longwave Infrared (LWIR) Photodetector Based on Nonlinear Absorption in InAs/GaAs Quantum Dots
Author
Lu, Xuejun ; Armiento, Craig ; Li, Jin ; Goodhue, William
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Lowell, MA
fYear
2006
fDate
16-18 Oct. 2006
Firstpage
322
Lastpage
325
Abstract
We present a new-type of LWIR photodetectors design based on the resonant cavity enhanced nonlinear absorption process in InAs/GaAs quantum dots. Low dark current and thermal-electrically cooled operation can be expected. The proposed device is promising for LWIR (8-12 mum) sensing and imaging with enhanced quantum efficiency and elevated operating temperature (>180degK).
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; InAs-GaAs; dark current; enhanced quantum efficiency; longwave infrared photodetector; nonlinear absorption; quantum dots; resonant cavity; thermal-electrically cooled operation; Dark current; Distributed Bragg reflectors; Electromagnetic wave absorption; Energy barrier; Gallium arsenide; Infrared sensors; Mirrors; Photodetectors; Quantum dots; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Biophotonics, Nanophotonics and Metamaterials, 2006. Metamaterials 2006. International Symposium on
Conference_Location
Hangzhou
Print_ISBN
0-7803-9773-8
Electronic_ISBN
0-7803-9774-6
Type
conf
DOI
10.1109/METAMAT.2006.335071
Filename
4134810
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