DocumentCode :
2049498
Title :
Electric-field and temperature dependencies of TDDB degradation in Cu/Low-K damascene structures
Author :
Suzumura, N. ; Yamamoto, S. ; Kodama, D. ; Miyazaki, H. ; Ogasawara, M. ; Komori, J. ; Murakami, E.
Author_Institution :
Renesas Technol. Corp., Itami
fYear :
2008
fDate :
April 27 2008-May 1 2008
Firstpage :
138
Lastpage :
143
Abstract :
The electric field and temperature dependencies of time-dependent dielectric breakdown (TDDB) degradation in Cu/low-k damascene structures are investigated using Cu/SiOC and Cu/SiCN damascene structures. A field-dependent activation energy analysis of TDDB lifetimes demonstrates that there are multiple TDDB degradation mechanisms for a Cu/SiOC structure and that the dominant TDDB degradation mechanism is dependent on the electric field. Under higher electric fields, the SiCN film used as a Cu barrier dielectric (BD) is the main cause of the TDDB failure. As the electric field decreases, the degradation of the inter-level dielectric (ILD) or ILD/BD interface has an impact on TDDB failure. Furthermore, it was found that the field-dependency of Ea reflects the dominant TDDB degradation mechanism and is an important factor in determining a TDDB degradation model that can predict an accurate TDDB lifetime.
Keywords :
copper; electric breakdown; low-k dielectric thin films; scanning electron microscopy; silicon compounds; Cu-SiCN; Cu-SiOC; TDDB degradation; activation energy analysis; barrier dielectric; electric fields; inter level dielectric interface; low-k damascene structures; time-dependent dielectric breakdown; Acceleration; Dielectric breakdown; Dielectric materials; Predictive models; Scanning electron microscopy; Semiconductor device modeling; Space technology; Temperature dependence; Testing; Thermal degradation; Cu interconnects; Field acceleration model; Low-k dielectrics; Thermal activation energy; Time-Dependent Dielectric Breakdown (TDDB);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
Type :
conf
DOI :
10.1109/RELPHY.2008.4558875
Filename :
4558875
Link To Document :
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