• DocumentCode
    2049646
  • Title

    First or second generation SI cells? A comparison of sensitivity from an SI filter system viewpoint

  • Author

    Lu Yue ; Sewell, J.I.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • fYear
    1990
  • fDate
    25-25 May 1990
  • Firstpage
    42675
  • Lastpage
    42679
  • Abstract
    A comparison study on SI filter sensitivity performance based on first generation and second generation cell realisation is carried out. The good sensitivity performance of second generation SI cell based structures is demonstrated by four filters and one equaliser. For SI filters based on first generation memory cells, it is shown that high ratio of clock frequency to cutoff frequency in lowpass case or high ratio of clock frequency to midband frequency in bandpass case would introduce high sensitivity performance, while the sensitivities of SI filters based on the second generation memory cell are not affected by the ratio.<>
  • Keywords
    active filters; equalisers; sensitivity analysis; switched current circuits; SI filter system; SI filters; clock frequency; cutoff frequency; equaliser; filter sensitivity; first generation cell realisation; first generation memory cells; midband frequency; second generation cell realisation; sensitivity; Active filters; Equalizers; Sensitivity; Switched circuits;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Digital and Analogue Filters and Filtering Systems, IEE Colloquium on
  • Conference_Location
    London, UK
  • Type

    conf

  • Filename
    472876