DocumentCode
2049646
Title
First or second generation SI cells? A comparison of sensitivity from an SI filter system viewpoint
Author
Lu Yue ; Sewell, J.I.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
1990
fDate
25-25 May 1990
Firstpage
42675
Lastpage
42679
Abstract
A comparison study on SI filter sensitivity performance based on first generation and second generation cell realisation is carried out. The good sensitivity performance of second generation SI cell based structures is demonstrated by four filters and one equaliser. For SI filters based on first generation memory cells, it is shown that high ratio of clock frequency to cutoff frequency in lowpass case or high ratio of clock frequency to midband frequency in bandpass case would introduce high sensitivity performance, while the sensitivities of SI filters based on the second generation memory cell are not affected by the ratio.<>
Keywords
active filters; equalisers; sensitivity analysis; switched current circuits; SI filter system; SI filters; clock frequency; cutoff frequency; equaliser; filter sensitivity; first generation cell realisation; first generation memory cells; midband frequency; second generation cell realisation; sensitivity; Active filters; Equalizers; Sensitivity; Switched circuits;
fLanguage
English
Publisher
iet
Conference_Titel
Digital and Analogue Filters and Filtering Systems, IEE Colloquium on
Conference_Location
London, UK
Type
conf
Filename
472876
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