DocumentCode
2049737
Title
Comparison of multiple cell upset response of BULK and SOI 130NM technologies in the terrestrial environment
Author
Gasiot, Gilles ; Roche, Philippe ; Flatresse, Philippe
Author_Institution
ST Microelectron., Crolles
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
192
Lastpage
194
Abstract
This paper presents alpha and neutron experimental results on 130 nm SRAMs processed in SOI and bulk technologies. Experiments were analyzed for multiple cells upset (MCU) occurrence. MCU percentages and rates were recorded as a function of different experimental parameters (supply voltage, test pattern, etc.). This work sheds light on the different mechanisms involved in MCU occurrence between SOI and bulk technologies.
Keywords
SRAM chips; integrated circuit testing; radiation effects; SRAM cells; multiple cell upset; silicon-on-insulator; size 130 nm; CMOS technology; Concatenated codes; Error correction codes; Interleaved codes; Neutrons; Pattern analysis; Performance evaluation; Random access memory; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558884
Filename
4558884
Link To Document