DocumentCode :
2049982
Title :
Failure-current based oxide reliability assessment methodology
Author :
Sune, Jordi ; Wu, Ernest ; Tous, Santi
Author_Institution :
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona
fYear :
2008
fDate :
April 27 2008-May 1 2008
Firstpage :
230
Lastpage :
239
Abstract :
A simple and robust reliability assessment methodology based on failure-current criteria is presented for ultra-thin gate oxides. This methodology only employs two parameters in the final failure distribution analogous to the standard first breakdown methodology. A method to extract these two parameters from the experimental stress test data is also presented which successfully reduces the difficulties and uncertainties related to the first BD detection.
Keywords :
semiconductor device breakdown; semiconductor device reliability; failure-current; oxide reliability assessment methodology; Accelerometers; Breakdown voltage; Electric breakdown; Extrapolation; Life estimation; Semiconductor device measurement; Shape; Testing; Time measurement; Uncertainty;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
Type :
conf
DOI :
10.1109/RELPHY.2008.4558892
Filename :
4558892
Link To Document :
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