Title :
Breakdown and impact ionisation coefficients in (AlxGa 1-x)0.52In0.48P p-i-n junctions
Author :
David, J.P.R. ; Ghin, R. ; Hopkinson, M. ; Pate, M.A. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
We report here ionisation coefficient measurements across the entire (AlxGa1-x)0.52In0.48P composition range and measurements of Vbd in a series of p-i-n junctions. It is found that this alloy system has significantly lower ionisation coefficients than GaAs or even Al1-xGax As but has a similar electric field dependence. The electron and hole ionisation coefficients are of similar magnitude for all the alloy compositions. The breakdown voltage in this alloy system is one of the largest obtainable with III-V´s and it increases linearly with increasing aluminium composition. This material system may therefore be a suitable replacement for Al1-xGaxAs in power devices
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; impact ionisation; indium compounds; p-n junctions; (AlxGa1-x)0.52In0.48P; (AlGa)0.52In0.48P; III-V semiconductor; breakdown voltage; electron ionisation coefficients; hole ionisation coefficients; impact ionisation coefficients; p-i-n junctions; power devices;
Conference_Titel :
Power Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
