• DocumentCode
    2049998
  • Title

    Second breakdown behavior in bipolar ESD protection devices during low current long duration stress and its relation to moving current-tubes

  • Author

    Johnsson, David ; Mamanee, Wasinee ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich ; Stecher, Matthias

  • Author_Institution
    Infineon Technol., Neubiberg
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    240
  • Lastpage
    246
  • Abstract
    Bipolar ESD protection devices subjected to low current long pulse stress can sustain a relatively long time during thermal second breakdown without any damage. The effect is related to a particular current filamentary behavior, which is observed optically by TIM and explained by device simulation. It is also shown that the second breakdown is initiated at the edges of the device when a moving current-tube arrives at the device edge. Thus circular devices, having no edges, exhibit lower risk of second breakdown.
  • Keywords
    bipolar transistors; electrostatic discharge; holographic interferometry; semiconductor device breakdown; semiconductor device models; bipolar ESD protection devices; current filamentary behavior; current-tubes; device simulation; low current long duration stress; thermal second breakdown; transient interferometric mapping; Breakdown voltage; Clamps; Electric breakdown; Electronic ballasts; Electrostatic discharge; ISO standards; Pins; Protection; System testing; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2049-0
  • Electronic_ISBN
    978-1-4244-2050-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.2008.4558893
  • Filename
    4558893