DocumentCode :
2049998
Title :
Second breakdown behavior in bipolar ESD protection devices during low current long duration stress and its relation to moving current-tubes
Author :
Johnsson, David ; Mamanee, Wasinee ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich ; Stecher, Matthias
Author_Institution :
Infineon Technol., Neubiberg
fYear :
2008
fDate :
April 27 2008-May 1 2008
Firstpage :
240
Lastpage :
246
Abstract :
Bipolar ESD protection devices subjected to low current long pulse stress can sustain a relatively long time during thermal second breakdown without any damage. The effect is related to a particular current filamentary behavior, which is observed optically by TIM and explained by device simulation. It is also shown that the second breakdown is initiated at the edges of the device when a moving current-tube arrives at the device edge. Thus circular devices, having no edges, exhibit lower risk of second breakdown.
Keywords :
bipolar transistors; electrostatic discharge; holographic interferometry; semiconductor device breakdown; semiconductor device models; bipolar ESD protection devices; current filamentary behavior; current-tubes; device simulation; low current long duration stress; thermal second breakdown; transient interferometric mapping; Breakdown voltage; Clamps; Electric breakdown; Electronic ballasts; Electrostatic discharge; ISO standards; Pins; Protection; System testing; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
Type :
conf
DOI :
10.1109/RELPHY.2008.4558893
Filename :
4558893
Link To Document :
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