DocumentCode
2049998
Title
Second breakdown behavior in bipolar ESD protection devices during low current long duration stress and its relation to moving current-tubes
Author
Johnsson, David ; Mamanee, Wasinee ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich ; Stecher, Matthias
Author_Institution
Infineon Technol., Neubiberg
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
240
Lastpage
246
Abstract
Bipolar ESD protection devices subjected to low current long pulse stress can sustain a relatively long time during thermal second breakdown without any damage. The effect is related to a particular current filamentary behavior, which is observed optically by TIM and explained by device simulation. It is also shown that the second breakdown is initiated at the edges of the device when a moving current-tube arrives at the device edge. Thus circular devices, having no edges, exhibit lower risk of second breakdown.
Keywords
bipolar transistors; electrostatic discharge; holographic interferometry; semiconductor device breakdown; semiconductor device models; bipolar ESD protection devices; current filamentary behavior; current-tubes; device simulation; low current long duration stress; thermal second breakdown; transient interferometric mapping; Breakdown voltage; Clamps; Electric breakdown; Electronic ballasts; Electrostatic discharge; ISO standards; Pins; Protection; System testing; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558893
Filename
4558893
Link To Document