DocumentCode
2050078
Title
Design of an integrated power MOSFET switch for use up to 13.56 MHz
Author
Leedham, R.J. ; Carter, D.R.H. ; McMahon, R.A.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
fYear
1994
fDate
34682
Firstpage
42401
Lastpage
42406
Abstract
This paper describes the analysis and design of an integrated power MOSFET switch for use at up to 13.56 MHz. The switch combines a high speed MOS-gate driver and a power MOSFET, with ratings of 500 V and Rds(on) of 2.5 Ω. Simulation of the design shows gate rise/fall times of 3 ns and a propagation delay of 11 ns
Keywords
field effect transistor switches; power MOSFET; power semiconductor switches; 11 ns; 13.56 MHz; 2.5 ohm; 3 ns; 500 V; design; fall times; high speed MOS-gate driver; integrated power MOSFET switch; propagation delay; rise times; simulation;
fLanguage
English
Publisher
iet
Conference_Titel
Power Semiconductor Devices, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
472900
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