A capacitance reliability degradation mechanism in Hyper-abrupt junction varactors

Junction varactors form key passive components for RF and analog application where capacitance could be tuned by a control voltage. This paper details and models a reliability degradation mechanism due to electron trapping at the side of shallow trench isolation (STI) of the varactor, leading to systematic capacitance degradation as function of time and stress conditions. A key dimension which controls this mechanism is the anode width or spacing between STI, where a minimum value should be defined to meet reliability targets.