Title :
A new dielectric degradation phenomenon in nMOS high-k devices under positive bias stress
Author :
Heh, Dawei ; Kirsch, Paul D. ; Young, Chadwin D. ; Bersuker, Gennadi
Author_Institution :
SEMATECH, Austin, TX
fDate :
April 27 2008-May 1 2008
Abstract :
A new hole trap generation phenomenon during a positive bias stress in nMOS high-k transistors is reported. Fast transient hole trapping at the generated defects is manifested in a negative threshold voltage shift (DeltaVth) observed after the detrapping of electrons. The precursors of these hole traps are thought to be associated with the nitrogen species, which can be incorporated in the interfacial SiO2 layer through gate stack processing.
Keywords :
MOSFET; electron traps; high-k dielectric thin films; hole traps; dielectric degradation phenomenon; electron detrapping; gate stack processing; hole trap generation phenomenon; interfacial SiO2 layer; nMOS high-k devices; nitrogen species; positive bias stress; Charge carrier processes; Degradation; Dielectric devices; Electron traps; High K dielectric materials; High-K gate dielectrics; MOS devices; Nitrogen; Stress; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558910
