DocumentCode
2050667
Title
Temperature dependence of dynamic conductance a step beyond Julliere model for Magnetic Tunnel Junctions
Author
Nowak, J.
Author_Institution
Adv. Transducer Dev., Seagate Technol. LLC, Bloomington, MN, USA
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, to evaluate the quality of MTJ temperature dependence of transport should be examined. For example, for 7.5 /spl Aring/ thick Al tunnel barrier, 37% of the total current is ohmic in nature and still junction can have MR=17% at room temperature.
Keywords
aluminium; tunnelling magnetoresistance; 293 to 298 K; 7.5 /spl Aring/; Al; Julliere model; dynamic conductance; magnetic tunnel junctions; room temperature; temperature dependence; Artificial intelligence; Curve fitting; Electrodes; Low voltage; Magnetic tunneling; Magnetoresistance; Oxidation; Plasma temperature; Resistors; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230635
Filename
1230635
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