Title :
Temperature dependence of dynamic conductance a step beyond Julliere model for Magnetic Tunnel Junctions
Author_Institution :
Adv. Transducer Dev., Seagate Technol. LLC, Bloomington, MN, USA
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, to evaluate the quality of MTJ temperature dependence of transport should be examined. For example, for 7.5 /spl Aring/ thick Al tunnel barrier, 37% of the total current is ohmic in nature and still junction can have MR=17% at room temperature.
Keywords :
aluminium; tunnelling magnetoresistance; 293 to 298 K; 7.5 /spl Aring/; Al; Julliere model; dynamic conductance; magnetic tunnel junctions; room temperature; temperature dependence; Artificial intelligence; Curve fitting; Electrodes; Low voltage; Magnetic tunneling; Magnetoresistance; Oxidation; Plasma temperature; Resistors; Temperature dependence;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230635
