Title :
Relaxation of localized charge in trapping-based nonvolatile memory devices
Author :
Janai, Meir ; Shappir, Assaf ; Bloom, Ilan ; Eitan, Boaz
Author_Institution :
Saifun Semicond., Netanya
fDate :
April 27 2008-May 1 2008
Abstract :
Relaxation dynamics of trapped holes and trapped electrons in the ONO layer of NROM devices is studied. Hole relaxation is eight orders of magnitude faster than electron relaxation. The degradation of data retention in cycled NROM cells is interpreted in terms of dispersive transport arising from random-walk of excess holes in the disordered nitride glass.
Keywords :
electron traps; hole traps; read-only storage; NROM device; ONO layer; disordered nitride glass; dispersive transport; localized charge relaxation; trapping-based nonvolatile memory device; Charge carrier processes; Charge carriers; Dispersion; Electron traps; Equations; Glass; Hot carriers; Nonvolatile memory; Photonic band gap; Temperature; NROM; NVM; ONO; Si3N4; amorphous semiconductors; data retention; flash memory; glass;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558921
