DocumentCode
2050772
Title
X-Band GaN FET reliability
Author
Jimenez, J.L. ; Chowdhury, U.
Author_Institution
TriQuint Semicond., Richardson, TX
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
429
Lastpage
435
Abstract
Over the last 3 years under the Wide Band Gap Semiconductor (WBGS) DARPA program, TriQuint and their partners, II-VI, IQE, BAE, MIT, RPI and UTD, have performed multiple multi-structure, multi-wafer, multi-technology reliability experiments and failure analysis studies on its GaN on SiC HEMT technology for X-band applications. This manuscript summarizes the main results of this effort.
Keywords
III-V semiconductors; failure analysis; gallium compounds; high electron mobility transistors; semiconductor device reliability; silicon compounds; wide band gap semiconductors; DARPA program; GaN-SiC; HEMT technology; TriQuint; X-band FET reliability; failure analysis; multistructure reliability; multiwafer reliability; wide band gap semiconductor; FETs; Gallium arsenide; Gallium nitride; HEMTs; Insulation; MODFETs; Radio frequency; Semiconductor device reliability; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558923
Filename
4558923
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