Title :
Kelvin probe study of laterally inhomogeneous dielectric charging and charge diffusion in RF MEMS capacitive switches
Author :
Herfst, R.W. ; Steeneken, P.G. ; Schmitz, J. ; Mank, A.J.G. ; van Gils, M.
Author_Institution :
NXP Semicond., Eindhoven
fDate :
April 27 2008-May 1 2008
Abstract :
In this paper we use scanning Kelvin probe microscopy (SKPM) to detect charge in the dielectric of RF MEMS capacitive switches. We observe a laterally inhomogeneous distribution. Laterally inhomogeneous dielectric charging leads to a narrowing of the C-V curve [1], and can lead to stiction of the membrane. The measurements show that trapped charges slowly diffuse, which reduces the inhomogeneity and shows that charge is vertically confined. From these measurements we estimate the lateral diffusion coefficient of trapped charges.
Keywords :
diffusion; microswitches; C-V curve; RF MEMS capacitive switches; charge diffusion; lateral diffusion coefficient; laterally inhomogeneous dielectric charging; scanning Kelvin probe microscopy; trapped charges; Biomembranes; Capacitance-voltage characteristics; Charge measurement; Current measurement; Dielectric measurements; Kelvin; Microscopy; Probes; Radiofrequency microelectromechanical systems; Switches; RF MEMS; capacitive switches; di-electric charging; diffusion; silicon nitride;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558935