Title :
Passivation integrity investigations for through wafer interconnects
Author :
Kraft, J. ; Hueber, A. ; Carniello, S. ; Schrank, F. ; Wachmann, E.
Author_Institution :
Austriamicrosystems AG, Graz
fDate :
April 27 2008-May 1 2008
Abstract :
Through wafer interconnects (TWI) with diameters greater than 50 mum have the advantage of extremely low contact resistances. The mechanics of the layers inside the TWI has to be well understood order to avoid passivation cracks. Results of simulation and mechanical investigations are discussed in this paper.
Keywords :
contact resistance; integrated circuit interconnections; passivation; wafer level packaging; contact resistances; passivation cracks; through wafer interconnects; Dielectric substrates; Etching; Integrated circuit interconnections; Integrated circuit packaging; Passivation; Plasma temperature; Sensor arrays; Silicon; Stress measurement; Wafer bonding;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558937
