Title :
Domain wall pinning at F/AF interface defects
Author :
Reboucas, G.O. ; Barbosa, J.C.P. ; Souza, H.T. ; Queiroz, I.S., Jr. ; Dantas, A.L. ; Carrico, A.S.
Author_Institution :
Dept. de Fisica, Univ. do Estado do Rio Grande do Norte, Mossoro, Brazil
fDate :
March 30 2003-April 3 2003
Abstract :
In this article, we discuss the nature of the domain wall nucleated in a single step defect in a F/AF bilayer. We have found that for ultra-thin F films the surface pattern is a replica of the interface pattern.
Keywords :
antiferromagnetic materials; ferromagnetic materials; ferromagnetic relaxation; magnetic domain walls; magnetic multilayers; magnetic structure; magnetic thin films; F-AF bilayer; F-AF interface defects; antiferromagnetic material; domain wall pinning; ferromagnetic material; interface pattern; nucleation; surface pattern; ultra thin F films; Anisotropic magnetoresistance; Antiferromagnetic materials; Crystallization; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic films; Perpendicular magnetic anisotropy; Strontium; Substrates;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230655
