Scanning near-field photon emission microscopy

Author

Isakov, D. ; Geinzer, T. ; Tio, A. ; Phang, JCH ; Zhang, Y. ; Balk, LJ

Author_Institution

Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

575

Lastpage

579

Abstract

A Scanning Near-field Photon Emission Microscope (SNPEM) for monitoring photon emission sites with a spatial resolution of between 50 to 200 nm is described. A protrusion type probe with a base diameter larger than a wavelength is proposed as a good compromise between resolution and sensitivity. Photon emissions from silicon pn junction and n-MOSFET have been detected with resolution clearly better than the far-field PEM (FFPEM). Features in photon emission distribution smaller than 200 nm were revealed in spite the fact that metal lines prevented the SNPEM probe to reach near-field condition with an actual emission source.

Keywords

MOSFET; scanning electron microscopy; actual emission source; far-field PEM; n-MOSFET; photon emission distribution; scanning near-field photon emission microscope; Apertures; Failure analysis; Integrated circuit technology; Optical microscopy; Optical scattering; Optical sensors; Photonic integrated circuits; Probes; Spatial resolution; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558947

Filename

4558947