Characterization of leakage behaviors of high-k gate stacks by electron-beam-induced current

Author

Chen, J. ; Sekiguchi, T. ; Fukata, N. ; Takase, M. ; Chikyow, T. ; Yamabe, K. ; Hasumuma, R. ; Sato, M. ; Nara, Y. ; Yamada, K.

Author_Institution

Nat. Inst. for Mater. Sci., Tsukuba

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

584

Lastpage

588

Abstract

Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. Carrier separated EBIC measurement has found that in non-stressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. The transport mechanisms of electron and holes in non-stressed high-k MOS capacitors were clarified. After stressing, positive charged traps are induced in nMOS and enhance electron conduction.

Keywords

EBIC; MOS capacitors; hafnium compounds; high-k dielectric thin films; leakage currents; tunnelling; EBIC; Hf-based high-k gate stacks; electron-beam-induced current; enhance electron conduction; hole conduction; leakage behaviors; pMOS; trap-assisted tunneling; Charge carrier processes; Dielectric loss measurement; Electron traps; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; Scanning electron microscopy; Semiconductor materials; Tunneling; EBIC; High-k dielectrics; Leakage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558949

Filename

4558949