Title :
Characterization of leakage behaviors of high-k gate stacks by electron-beam-induced current
Author :
Chen, J. ; Sekiguchi, T. ; Fukata, N. ; Takase, M. ; Chikyow, T. ; Yamabe, K. ; Hasumuma, R. ; Sato, M. ; Nara, Y. ; Yamada, K.
Author_Institution :
Nat. Inst. for Mater. Sci., Tsukuba
fDate :
April 27 2008-May 1 2008
Abstract :
Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. Carrier separated EBIC measurement has found that in non-stressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. The transport mechanisms of electron and holes in non-stressed high-k MOS capacitors were clarified. After stressing, positive charged traps are induced in nMOS and enhance electron conduction.
Keywords :
EBIC; MOS capacitors; hafnium compounds; high-k dielectric thin films; leakage currents; tunnelling; EBIC; Hf-based high-k gate stacks; electron-beam-induced current; enhance electron conduction; hole conduction; leakage behaviors; pMOS; trap-assisted tunneling; Charge carrier processes; Dielectric loss measurement; Electron traps; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; Scanning electron microscopy; Semiconductor materials; Tunneling; EBIC; High-k dielectrics; Leakage;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558949
